A STUDY OF THE INFLUENCE OF HYDRODYNAMIC MODEL EFFECTS ON CHARACTERISTICS OF SILICON BIPOLAR TRANSISTORS

Abstract

With decreasing vertical dimensions of the bipolar transistor (BJT), non‐local effects of nonuniform electron temperature should have a significant effect on the BJT characteristics. These effects can be simulated using a hydrodynamic (HD) model of the BJT, in which the equation of energy balance is added to the set of Poisson's and continuity equations.

Citation

Sadovnikov, A.D. and Roulston, D.J. (1993), "A STUDY OF THE INFLUENCE OF HYDRODYNAMIC MODEL EFFECTS ON CHARACTERISTICS OF SILICON BIPOLAR TRANSISTORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 245-262. https://doi.org/10.1108/eb051803