Anodised Aluminium as an Alternative Substrate for High Power Hybrid Microelectronics

Abstract

An investigation to evaluate the suitability of anodised aluminium as a substrate material has shown that the relatively high coefficient of thermal expansion of the aluminium caused the brittle cermet resistors to craze giving rise to unstable resistance values whereas PTF resistors appeared to suffer no ill effects. The work was implemented in conjunction with selection of low temperature thick film conductor and resistor inks to achieve the optimum combination of anodised aluminium substrate and ink system. These inks were then printed and fired on anodised aluminium, aluminium nitride and alumina substrates, and the physical and electrical properties of the inks and substrates compared. A combination of modest success, employing polymer resistors and cermet conductors, produced viable circuits with resistors of reasonable stability. A low power hybrid device, with surface mounted components, was employed to further validate the substrate/ink combinations in ongoing tests.

Citation

Brakspear, S. (1990), "Anodised Aluminium as an Alternative Substrate for High Power Hybrid Microelectronics", Microelectronics International, Vol. 7 No. 2, pp. 8-11. https://doi.org/10.1108/eb044407