A SPLITTING SCHEME FOR A DRIFT‐DIFFUSION MODEL OF SEMICONDUCTORS

Abstract

In this paper, the authors describe a more efficient and economical method for a splitting scheme for drift‐diffusion models for semiconductors. It enables one to calculate stationary and non‐stationary processes in semiconductor plasma.

Citation

BEREZIN, Y.A. and DMITRIEVA, O.E. (1988), "A SPLITTING SCHEME FOR A DRIFT‐DIFFUSION MODEL OF SEMICONDUCTORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 7 No. 4, pp. 227-232. https://doi.org/10.1108/eb010320