FINITE ELEMENT SIMULATION OF HALL EFFECT IN SEMICONDUCTORS

Abstract

Materials with anisotropic conductivity are frequently used as sensors in electrical industries. In this paper, an anisotropic conductivity tensor to express Hall effect in n‐type semiconductors is derived and its steady‐current field is solved using the finite element method. Some numerical examples are given and comparison with measured data is discussed.

Citation

KAMEDA, E. and KAGAWA, Y. (1986), "FINITE ELEMENT SIMULATION OF HALL EFFECT IN SEMICONDUCTORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 5 No. 3, pp. 137-147. https://doi.org/10.1108/eb010023