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ON MODELING THE INTRINSIC NUMBER AND FERMI LEVELS FOR DEVICE AND PROCESS SIMULATION

W. JÜNGLING, E. GUERRERO, S. SELBERHERR

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 1 February 1984

45

Abstract

We discuss three models describing the carrier densities in highly doped silicon, which have been used for process and device simulation. We calculate nie for each of the models for various doping concentrations within temperature ranges interesting for the device and process simulation. We try to explain the behaviour of nie for high compensation and compare our calculated results to measured values of nie. We offer simple formulae for the calculated nie and show how far the relations between the carrier densities and the Fermi levels can be described by the simple formulae of Boltzmann statistics when we use a doping dependent effective intrinsic number.

Citation

JÜNGLING, W., GUERRERO, E. and SELBERHERR, S. (1984), "ON MODELING THE INTRINSIC NUMBER AND FERMI LEVELS FOR DEVICE AND PROCESS SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 3 No. 2, pp. 79-105. https://doi.org/10.1108/eb009989

Publisher

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MCB UP Ltd

Copyright © 1984, MCB UP Limited

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