A failure location technology for SiP devices based on TDR nondestructive testing method
Microelectronics International
ISSN: 1356-5362
Article publication date: 7 February 2023
Issue publication date: 17 March 2023
Abstract
Purpose
Traditional nondestructive failure localization techniques are increasingly difficult to meet the requirements of high density and integration of system in package (SIP) devices in terms of resolution and accuracy. Time domain reflection (TDR) is recognized as a novel positioning analysis technology gradually being used in the electronics industry because of the good compatibility, high accuracy and high efficiency. However, there are limited reports focus on the application of TDR technology to SiP devices.
Design/methodology/approach
In this study, the authors used the TDR technique to locate the failure of SiP devices, and the results showed that the TDR technique can accurately locate the cracking of internal solder joints of SiP devices.
Findings
The measured transmission rate of electromagnetic wave signal was 9.56 × 107 m/s in the experimental SiP devices. In addition, the TDR technique successfully located the failure point, which was mainly caused by the cracking of the solder joint at the edge of the SiP device after 1,500 thermal cycles.
Originality/value
TDR technology is creatively applied to SiP device failure location, and quantitative analysis is realized.
Keywords
Acknowledgements
This work is financially supported by the National Key R&D Program of China under Grant No.2020YFB1710300, and CEPREI Innovation and Development Fund No. 21Z23 and No. 22Z04, which were acknowledged.
Declaration of competing interest: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Citation
Xiao, H., Guo, X., Chen, F., Zhang, W., Liu, H., Chen, Z. and Liu, J. (2023), "A failure location technology for SiP devices based on TDR nondestructive testing method", Microelectronics International, Vol. 40 No. 2, pp. 152-158. https://doi.org/10.1108/MI-09-2022-0168
Publisher
:Emerald Publishing Limited
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