Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation

Abstract

Purpose

This study aims to investigate the possible defects and their root causes in a soft-termination multilayered ceramic capacitor (MLCC) when subjected to a thermal reflow process.

Design/methodology/approach

Specimens of the capacitor assembly were subjected to JEDEC level 1 preconditioning (85 °C/85%RH/168 h) with 5× reflow at 270°C peak temperature. Then, they were inspected using a 2 µm scanning electron microscope to investigate the evidence of defects. The reliability test was also numerically simulated and analyzed using the extended finite element method implemented in ABAQUS.

Findings

Excellent agreements were observed between the SEM inspections and the simulation results. The findings showed evidence of discontinuities along the Cu and the Cu-epoxy layers and interfacial delamination crack at the Cu/Cu-epoxy interface. The possible root causes are thermal mismatch between the Cu and Cu-epoxy layers, moisture contamination and weak Cu/Cu-epoxy interface. The maximum crack length observed in the experimentally reflowed capacitor was measured as 75 µm, a 2.59% difference compared to the numerical prediction of 77.2 µm.

Practical implications

This work's contribution is expected to reduce the additional manufacturing cost and lead time in investigating reliability issues in MLCCs.

Originality/value

Despite the significant number of works on the reliability assessment of surface mount capacitors, work on crack growth in soft-termination MLCC is limited. Also, the combined experimental and numerical investigation of reflow-induced reliability issues in soft-termination MLCC is limited. These cited gaps are the novelties of this study.

Citation

Apalowo, R.K., Abas, M.A., Bachok, Z., Sharif, M.F.M., Che Ani, F., Ramli, M.R. and Mukhtar, M.A.F.b.M. (2024), "Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation", Microelectronics International, Vol. 41 No. 3, pp. 162-171. https://doi.org/10.1108/MI-03-2023-0025