Characteristics of passive Ta‐resistive planes embedded in Al‐sheet “PCB” ‐ compatible for integrated MCM‐substrates or packaging carriers

Abstract

Recent progress in the investigation of the material parameters of Al/Al₂O₃systems leads to an increase in the possibilities for using embedded TaO_XN_1‐X layers. The use of Al‐sheets as mechanical strength carriers in combination with vacuum‐deposited Al‐layers and electrochemically anodized Al₂O₃ structure requires study. This was found to create a periodic multilayer Al/Al₂O₃ structure. The material qualities of this system allow optimization in order to achieve high speed data processing and signal propagation. The existing studies using Al and Ta combination as well as the high resistance qualities of the modified TaO_XN_1‐X layers have shown satisfactory results. It can be concluded that the development of this new layer combination is possible in the multilayer carrier structures. Some preliminary research studies show a proper adhesion and satisfactory characteristics of the two integrated resistive planes in the multilayer combination Al/Al₂O₃//TaO_XN_1‐X/Ta₂O₅/Al.

Citation

Ivanov Philippov, P., Markova Rassovska, M., Georgiev Arnaudov, R., Angelov Ianev, V. and Draganova Gospodinova, M. (1999), "Characteristics of passive Ta‐resistive planes embedded in Al‐sheet “PCB” ‐ compatible for integrated MCM‐substrates or packaging carriers", Microelectronics International, Vol. 16 No. 1, pp. 18-20. https://doi.org/10.1108/13565369910250041