Polysilicon nanogap structure development using size expansion technique

Abstract

Purpose

Nanobiosensors based on nanogap capacitor are widely used for measuring dielectric properties of DNA, protein and biomolecule. The purpose of this paper is to report on the fabrication and characterization polysilicon nanogap patterning using novelties technique.

Design/methodology/approach

Overall, the polysilicon nanogap pattern was fabricated based on conventional lithographic techniques. For size expansion technique, by employing simple dry thermal oxidation, the couple of nanogap pattern has been expanded to lowest nanogap value. The progress of nanogap pattern expansion was verified by using scanning electron microscopy (SEM). Conductivity, resistivity, and capacitance test were performed to characterize and to measure electrical behavior of full device fabrication.

Findings

SEM characterization emphasis on the expansion of polysilicon nanogap pattern increasing with respect to oxidation time. Electrical characterization shows that nanogap enhanced the sensitivity of the device at the value of nano ampere of current.

Originality/value

These simple least‐cost method does not require complicated nanolithography method of fabrication but still possible to serve as biomolecular junction. This approach can be applied extensively to different design of nanogap structure down to several nanometer levels of dimensions. A method of preparing a nanogap electrode according to the present innovation has an advantage of providing active surface that can be easily modified for immobilizations of biomolecules.

Citation

Hashim, U., Taib, N., Dhahi, T.S. and Saifullah, A. (2011), "Polysilicon nanogap structure development using size expansion technique", Microelectronics International, Vol. 28 No. 3, pp. 24-30. https://doi.org/10.1108/13565361111162594