Stabilization network optimization of internally matched GaN HEMTs

Abstract

Purpose

The purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs).

Design/methodology/approach

The effects of the two stabilization networks on the characteristics of the device are discussed, such as the stability, power gain and output power.

Findings

With the optimized stabilization network, the internally matched GaN HEMTs with 16‐mm gate width exhibited good stability and delivers a 46 dBm output power with 6.1 dB power gain under the continuous wave condition at 8 GHz. By using the optimized stabilization network, the package process of the large‐scale microwave power device of GaN HEMTs can be simplified.

Originality/value

This paper provides useful information for the internally matched GaN HEMTs.

Citation

Luo, W.J., Chen, X.J., Yang, C.Y., Zheng, Y.K., Wei, K. and Liu, X.Y. (2011), "Stabilization network optimization of internally matched GaN HEMTs", Microelectronics International, Vol. 28 No. 2, pp. 34-37. https://doi.org/10.1108/13565361111127331