New modeling approach of on‐chip interconnects for RF integrated circuits in CMOS technology

Abstract

New analytical approximation for the frequency‐dependent impedance matrix components of symmetric VLSI interconnect on lossy silicon substrate are derived. The results have been obtained by using an approximate quasi‐magnetostatic analysis of symmetric coupled microstrip on‐chip interconnects on silicon. We assume that the magnetostatic field meets the boundary conditions of a single isolated infinite line; therefore, the boundary conditions for the conductors in the structure are approximately satisfied. The derivation is based on the approximate solution of quasi‐magnetostatic equations in the structure (dielectric and silicon semi‐space), and takes into account the substrate skin‐effect. Comparisons with published data from circuit modeling or full‐wave numerical analyses are presented to validate the inductance and resistance expressions derived for symmetric coupled VLSI interconnects. The analytical characterization presented in this paper is well situated for inclusion into CAD codes in the design of RF and mixed‐signal integrated circuits on silicon.

Citation

Ymeri, H., Nauwelaers, B., Maex, K. and De Roest, D. (2003), "New modeling approach of on‐chip interconnects for RF integrated circuits in CMOS technology", Microelectronics International, Vol. 20 No. 3, pp. 41-44. https://doi.org/10.1108/13565360310487945