Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle

Abstract

Purpose

On the basis of the maximum entropy principle, seeks to formulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter.

Design/methodology/approach

The model considers the conduction band to be described by the Kane dispersion relation and includes both Γ and L valleys. Takes into account electron‐non‐polar optical phonon, electron‐polar optical phonon and electro‐acoustic phonon scattering.

Findings

The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high‐order shock‐capturing central differencing scheme has been employed.

Originality/value

Presents the results of simulations of n⁺ ‐n‐n⁺ GaAs diode and Gunn oscillator.

Citation

Mascali, G. and Romano, V. (2005), "Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 24 No. 1, pp. 35-54. https://doi.org/10.1108/03321640510571039