Using of EM fields during industrial CZ and FZ large silicon crystal growth

Abstract

The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200–300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set‐up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.

Citation

Mühlbauer, A., Muiznieks, A., Ratnieks, G., Krauze, A., Raming, G. and Wetzel, T. (2003), "Using of EM fields during industrial CZ and FZ large silicon crystal growth", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 22 No. 1, pp. 123-133. https://doi.org/10.1108/03321640310452222