Developments in advanced silicon etching techniques by STS Systems

Abstract

Describes a novel dry etching technique, developed by STS Systems plc, based on a high‐density, inductively coupled plasma (ICP) technology, which enables the fabrication of advanced silicon microsensors and a wide range of other MEMS devices. Describes the process and illustrates various applications.

Citation

Bogue, R. (2002), "Developments in advanced silicon etching techniques by STS Systems", Sensor Review, Vol. 22 No. 1, pp. 41-45. https://doi.org/10.1108/02602280210416132